MD40N50 Specs and Replacement
Type Designator: MD40N50
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 250 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 40 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 141 nS
Cossⓘ - Output Capacitance: 751.2 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
Package: TO247
MD40N50 substitution
- MOSFET ⓘ Cross-Reference Search
MD40N50 datasheet
md40n50.pdf
Silicon N-Channel Power MOSFET Description The MD40N50 uses advanced technology and design to provide excellent RDS(ON) . It can be used in a wide variety of applications. General Features V =500V,I =40A DS D Low ON Resistance Low Reverse transfer capacitances 100% Single Pulse avalanche energy Test Application Power switching application TO-247 Adapter and... See More ⇒
md40n25.pdf
Silicon N-Channel Power MOSFET Description MD40N25 the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. General Features V =250V, R ... See More ⇒
Detailed specifications: MPG08N68S, MPG120N06P, MPG120N06S, MPG150N10P, MPG150N10S, MPT035N08P, MPT035N08S, FTP06N06N, IRF530, MD50N50, MDT35P10D, MDT40P10D, MDT80N06D, MP13N50, MP5N50, MPF4N65, MPF7N65
Keywords - MD40N50 MOSFET specs
MD40N50 cross reference
MD40N50 equivalent finder
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MD40N50 substitution
MD40N50 replacement
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