All MOSFET. MDT35P10D Datasheet

 

MDT35P10D Datasheet and Replacement


   Type Designator: MDT35P10D
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 180 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 110 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 35 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 190 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm
   Package: TO252
 

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MDT35P10D Datasheet (PDF)

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MDT35P10D

MDT35P10DSilicon P-Channel Power MOSFET SiliconDescriptionThe MDT35P10D uses advanced technology and design to provideexcellent RDS(ON) . It can be used in a wide variety of applications.General Features VDS=-110V, ID=-35A Low ON Resistance Low Reverse transfer capacitances 100% Single Pulse avalanche energy TestApplication Power switching application

Datasheet: MPG120N06S , MPG150N10P , MPG150N10S , MPT035N08P , MPT035N08S , FTP06N06N , MD40N50 , MD50N50 , AON6380 , MDT40P10D , MDT80N06D , MP13N50 , MP5N50 , MPF4N65 , MPF7N65 , MPG100N03P , MPG100N06 .

History: STLT19FI

Keywords - MDT35P10D MOSFET datasheet

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