MDT35P10D Specs and Replacement
Type Designator: MDT35P10D
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 180 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 110 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 35 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 21 nS
Cossⓘ - Output Capacitance: 190 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm
Package: TO252
MDT35P10D substitution
- MOSFET ⓘ Cross-Reference Search
MDT35P10D datasheet
Detailed specifications: MPG120N06S, MPG150N10P, MPG150N10S, MPT035N08P, MPT035N08S, FTP06N06N, MD40N50, MD50N50, NCEP15T14, MDT40P10D, MDT80N06D, MP13N50, MP5N50, MPF4N65, MPF7N65, MPG100N03P, MPG100N06
Keywords - MDT35P10D MOSFET specs
MDT35P10D cross reference
MDT35P10D equivalent finder
MDT35P10D pdf lookup
MDT35P10D substitution
MDT35P10D replacement
Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: APM4588K
🌐 : EN ES РУ
LIST
Last Update
MOSFET: AUB062N08BG | AUB060N08AG | AUB056N10 | AUB056N08BGL | AUB050N085 | AUB050N055 | AUB045N12 | AUB045N10BT | AUB039N10 | AUB034N10
Popular searches
d331 transistor | irfbc40 | mp16b transistor | 2sa934 | 2sd118 | 2n3403 | 2sa750 | tip117