MPG30P10P Datasheet. Specs and Replacement
Type Designator: MPG30P10P 📄📄
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 180 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 30 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 21 nS
Cossⓘ - Output Capacitance: 190 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm
Package: TO220
MPG30P10P substitution
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MPG30P10P datasheet
mpg30p10p.pdf
Silicon P-Channel Power MOSFET Description The MPG30P10P uses advanced technology and design to provide excellent RDS(ON) . It can be used in a wide variety of applications. General Features VDS=-100V, ID=-30A Low ON Resistance Low Reverse transfer capacitances 100% Single Pulse avalanche energy Test Application Power switching application Adapter and charger ... See More ⇒
mdt30n10d mpg30n10p.pdf
100V N-Channel Power MOSFET DESCRIPTION The MPG30N10 uses advanced trench technology toprovide excellent R , low gate charge. It can be used in a wide DS(ON) variety of applications. KEY CHARACTERISTICS V = 100V,I =30A DS D R ... See More ⇒
Detailed specifications: MP5N50, MPF4N65, MPF7N65, MPG100N03P, MPG100N06, MDT100N06, MPS100N06, MPG160N04P, 5N60, MPG40P10P, MPG50N06P, MPG55N06P, MPT028N10S, MPT037N08P, MPT037N08S, MPT042N10P, MPT042N10S
Keywords - MPG30P10P MOSFET specs
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