All MOSFET. MPG30P10P Datasheet

 

MPG30P10P Datasheet and Replacement


   Type Designator: MPG30P10P
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 180 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 30 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 190 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm
   Package: TO220
 

 MPG30P10P substitution

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MPG30P10P Datasheet (PDF)

 ..1. Size:205K  cn minos
mpg30p10p.pdf pdf_icon

MPG30P10P

Silicon P-Channel Power MOSFETDescriptionThe MPG30P10P uses advanced technology and design to provideexcellent RDS(ON) . It can be used in a wide variety of applications.General Features VDS=-100V, ID=-30A Low ON Resistance Low Reverse transfer capacitances 100% Single Pulse avalanche energy TestApplication Power switching application Adapter and charger

 9.1. Size:2198K  cn minos
mpg30n06p.pdf pdf_icon

MPG30P10P

Green Product MPG30N06 60V N-Channel Power MOSFET KEY CHARACTERISTICS DESCRIPTION V = 60V,I = 30A DS DThe MPG30N60 uses advanced trench technology to provide R

 9.2. Size:951K  cn minos
mdt30n10d mpg30n10p.pdf pdf_icon

MPG30P10P

100V N-Channel Power MOSFETDESCRIPTIONThe MPG30N10 uses advanced trench technology toprovideexcellent R , low gate charge. It can be used in a wideDS(ON)variety of applications.KEY CHARACTERISTICS V = 100V,I =30ADS DR

Datasheet: MP5N50 , MPF4N65 , MPF7N65 , MPG100N03P , MPG100N06 , MDT100N06 , MPS100N06 , MPG160N04P , 10N65 , MPG40P10P , MPG50N06P , MPG55N06P , MPT028N10S , MPT037N08P , MPT037N08S , MPT042N10P , MPT042N10S .

History: MPG40P10P

Keywords - MPG30P10P MOSFET datasheet

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