MPG55N06P Datasheet. Specs and Replacement
Type Designator: MPG55N06P 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 55 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 90 nS
Cossⓘ - Output Capacitance: 225 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
Package: TO220
MPG55N06P substitution
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MPG55N06P datasheet
mpg55n06p.pdf
Silicon N-Channel Power MOSFET Description The MPG55N06 uses advanced trench technology and design To provide Excellent R . It can be used in a wide variety DS(ON) of applications. General Features V =60V,I =55A DS D R 14m @V =10V (Typ 11.0 m ) dson GS R 16m @V =4.5V (Typ 12.5m ) dson GS Low ON Resistance Low Reverse transfer capacitances 100% Single P... See More ⇒
Detailed specifications: MPG100N03P, MPG100N06, MDT100N06, MPS100N06, MPG160N04P, MPG30P10P, MPG40P10P, MPG50N06P, AO3407, MPT028N10S, MPT037N08P, MPT037N08S, MPT042N10P, MPT042N10S, MPT045N08P, MPT045N08S, MPT65N08
Keywords - MPG55N06P MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
