All MOSFET. MPG55N06P Datasheet

 

MPG55N06P Datasheet and Replacement


   Type Designator: MPG55N06P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 55 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 90 nS
   Cossⓘ - Output Capacitance: 225 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
   Package: TO220
 

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MPG55N06P Datasheet (PDF)

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MPG55N06P

Silicon N-Channel Power MOSFETDescriptionThe MPG55N06 uses advanced trench technology and designTo provide Excellent R . It can be used in a wide varietyDS(ON)of applications.General Features V =60V,I =55ADS DR 14m @V =10V (Typ:11.0 m)dson GSR 16m @V =4.5V (Typ:12.5m)dson GS Low ON Resistance Low Reverse transfer capacitances 100% Single P

Datasheet: MPG100N03P , MPG100N06 , MDT100N06 , MPS100N06 , MPG160N04P , MPG30P10P , MPG40P10P , MPG50N06P , 7N60 , , , , , , , , .

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