All MOSFET. MPT037N08S Datasheet

 

MPT037N08S Datasheet and Replacement


   Type Designator: MPT037N08S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 208.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 85 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 120 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 68 nS
   Cossⓘ - Output Capacitance: 1181 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0037 Ohm
   Package: TO263
 

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MPT037N08S Datasheet (PDF)

 ..1. Size:848K  cn minos
 mpt037n08p mpt037n08s.pdf pdf_icon

MPT037N08S

85V N-Channel Power MOSFEDescriptionMPT037N08,the N-channel Enhanced Power MOSFETs,is obtained by advanced double trench technology whichreduce the conduction loss,improve switching performanceand enhance the avalanche energy. This is suitable devicefor BMS and high current switching applications.General Features V =85V, R

 9.1. Size:826K  cn minos
 mpt035n08p mpt035n08s.pdf pdf_icon

MPT037N08S

85V N-Channel Power MOSFETDescriptionMPT035N08,the N-channel Enhanced Power MOSFETs,Is obtained by advanced double trench technology whichreduce the conduction loss,improve switching performanceand enhance the avalanche energy. This is suitable devicefor BMS and high current switching applications.General Features V =85V, R

Datasheet: MPS100N06 , MPG160N04P , MPG30P10P , MPG40P10P , MPG50N06P , MPG55N06P , MPT028N10S , MPT037N08P , STF13NM60N , MPT042N10P , MPT042N10S , MPT045N08P , MPT045N08S , MPT65N08 , MPT65N08S , P80NF70 , AO3400S .

History: MPT042N10P | MDHT7N25URH | HGB220N25S | IPD50R520CP | SSM09N90CGW | HGK220N25S | SSM04N70BGP-A

Keywords - MPT037N08S MOSFET datasheet

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