MPT037N08S Datasheet. Specs and Replacement

Type Designator: MPT037N08S  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 208.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 85 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 120 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 68 nS

Cossⓘ - Output Capacitance: 1181 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0037 Ohm

Package: TO263

MPT037N08S substitution

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MPT037N08S datasheet

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MPT037N08S

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MPT037N08S

85V N-Channel Power MOSFET Description MPT035N08,the N-channel Enhanced Power MOSFETs, Is obtained by advanced double trench technology which reduce the conduction loss,improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. General Features V =85V, R ... See More ⇒

Detailed specifications: MPS100N06, MPG160N04P, MPG30P10P, MPG40P10P, MPG50N06P, MPG55N06P, MPT028N10S, MPT037N08P, IRF520, MPT042N10P, MPT042N10S, MPT045N08P, MPT045N08S, MPT65N08, MPT65N08S, P80NF70, AO3400S

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