All MOSFET. MPT042N10S Datasheet

 

MPT042N10S Datasheet and Replacement


   Type Designator: MPT042N10S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 227.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 120 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 33 nS
   Cossⓘ - Output Capacitance: 2584 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0042 Ohm
   Package: TO263
 

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MPT042N10S Datasheet (PDF)

 ..1. Size:819K  cn minos
 mpt042n10p mpt042n10s.pdf pdf_icon

MPT042N10S

100V N-Channel Power MOSFETDescriptionMPT042N10, the N-channel Enhanced Power MOSFETs,is obtained by advanced double trench technology whichreduce the conduction loss, improve switching performanceand enhance the avalanche energy. This is suitable devicefor motor drivers and high speed switching applications.General Features V =100V, R

 9.1. Size:875K  cn minos
 mpt045n08p mpt045n08s.pdf pdf_icon

MPT042N10S

85V N-Channel Power MOSFETDescriptionMPT045n08, the N-channel Enhanced Power MOSFETs,is obtained by advanced double trench technology whichreduce the conduction loss, improve switching performanceand enhance the avalanche energy. This is suitable device formotor drivers and high speed switching applications.General Features V =85V, R

Datasheet: MPG30P10P , MPG40P10P , MPG50N06P , MPG55N06P , MPT028N10S , MPT037N08P , MPT037N08S , MPT042N10P , IRFZ24N , MPT045N08P , MPT045N08S , MPT65N08 , MPT65N08S , P80NF70 , AO3400S , AO3401S , IRLR024NTR .

History: MPT037N08S | MPT042N10P | SSM09N90CGW | HGB220N25S | IPD50R520CP | HGK220N25S | SSM04N70BGP-A

Keywords - MPT042N10S MOSFET datasheet

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