MPT042N10S Datasheet. Specs and Replacement

Type Designator: MPT042N10S  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 227.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 120 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 33 nS

Cossⓘ - Output Capacitance: 2584 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0042 Ohm

Package: TO263

MPT042N10S substitution

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MPT042N10S datasheet

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 mpt042n10p mpt042n10s.pdf pdf_icon

MPT042N10S

100V N-Channel Power MOSFET Description MPT042N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for motor drivers and high speed switching applications. General Features V =100V, R ... See More ⇒

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 mpt045n08p mpt045n08s.pdf pdf_icon

MPT042N10S

85V N-Channel Power MOSFET Description MPT045n08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for motor drivers and high speed switching applications. General Features V =85V, R ... See More ⇒

Detailed specifications: MPG30P10P, MPG40P10P, MPG50N06P, MPG55N06P, MPT028N10S, MPT037N08P, MPT037N08S, MPT042N10P, STF13NM60N, MPT045N08P, MPT045N08S, MPT65N08, MPT65N08S, P80NF70, AO3400S, AO3401S, IRLR024NTR

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