MD20N60 Datasheet. Specs and Replacement

Type Designator: MD20N60  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 300 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 85 nS

Cossⓘ - Output Capacitance: 250 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.46 Ohm

Package: TO3PN

MD20N60 substitution

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MD20N60 datasheet

 ..1. Size:655K  cn minos
 md20n60.pdf pdf_icon

MD20N60

Description MD20N60,the silicon N-channel Enhanced MOSFETs,is obtained by advanced MOSFET technology which reduce the conduction loss improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Parameter Value Unit VDS@Tj.max 600 V ID 20 A RDS(ON).TyP 0.39 ... See More ⇒

 8.1. Size:1030K  cn minos
 md20n65.pdf pdf_icon

MD20N60

Silicon N-Channel Power MOSFET Description MD20N65,the silicon N-channel Enhanced MOSFETs,is obtained by advanced MOSFET technology which reduce the conduction loss improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS V =650V, R ... See More ⇒

 9.1. Size:808K  cn vbsemi
 cmd20n06l.pdf pdf_icon

MD20N60

CMD20N06L www.VBsemi.tw N-Channel 6 0-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) rDS(on) ( ) ID (A)a Available 175 C Junction Temperature 0.025 at VGS = 10 V 35 RoHS* 60 0.030 at VGS = 4.5 V 30 COMPLIANT TO-252 D G Drain Connected to Tab G D S S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise n... See More ⇒

 9.2. Size:877K  cn minos
 md20n50.pdf pdf_icon

MD20N60

Silicon N-Channel Power MOSFET Description MD20N50 the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. General Features V =500V, R ... See More ⇒

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Detailed specifications: MPT045N08S, MPT65N08, MPT65N08S, P80NF70, AO3400S, AO3401S, IRLR024NTR, K3878, 7N60, MD20N65, MD23N50, MD33N25, MD40N25, MD9N90, MDP18N20, MDP2N60, MDP5N65

Keywords - MD20N60 MOSFET specs

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