MD9N90 Datasheet and Replacement
Type Designator: MD9N90
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 350 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 9 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 130 nS
Cossⓘ - Output Capacitance: 215 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.15 Ohm
Package: TO3P
MD9N90 substitution
MD9N90 Datasheet (PDF)
md9n90.pdf

Silicon N-Channel Power MOSFETDescriptionThe MD9N90 uses advanced technology and design toprovide excellent R . It can be used in a wide variety ofDS(ON)applications.General Features V =900V, R
Datasheet: AO3401S , IRLR024NTR , K3878 , MD20N60 , MD20N65 , MD23N50 , MD33N25 , MD40N25 , MMD60R360PRH , MDP18N20 , MDP2N60 , MDP5N65 , MDP9N20 , MDT08N06D , MPG180N10P , MPG180N10S , MPG200N08P .
History: MDP18N20
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History: MDP18N20



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