MD9N90 Datasheet. Specs and Replacement

Type Designator: MD9N90  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 350 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 130 nS

Cossⓘ - Output Capacitance: 215 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.15 Ohm

Package: TO3P

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MD9N90 datasheet

 ..1. Size:810K  cn minos
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MD9N90

Silicon N-Channel Power MOSFET Description The MD9N90 uses advanced technology and design to provide excellent R . It can be used in a wide variety of DS(ON) applications. General Features V =900V, R ... See More ⇒

Detailed specifications: AO3401S, IRLR024NTR, K3878, MD20N60, MD20N65, MD23N50, MD33N25, MD40N25, IRF9640, MDP18N20, MDP2N60, MDP5N65, MDP9N20, MDT08N06D, MPG180N10P, MPG180N10S, MPG200N08P

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