MDT08N06D Datasheet. Specs and Replacement

Type Designator: MDT08N06D  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 107 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7 nS

Cossⓘ - Output Capacitance: 270 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm

Package: TO252

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MDT08N06D datasheet

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MDT08N06D

60V N-Channel Power MOSFET Description The MDT08N06 uses advanced trench technology to provide excellent RDS(ON), low gate charge. It can be used in a wide variety of applications. General Features V =60V, R ... See More ⇒

Detailed specifications: MD23N50, MD33N25, MD40N25, MD9N90, MDP18N20, MDP2N60, MDP5N65, MDP9N20, RU7088R, MPG180N10P, MPG180N10S, MPG200N08P, MPG200N08S, MPG30N06P, MPG30N10P, MPG40N10P, MPG60N10P

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