All MOSFET. MDT08N06D Datasheet

 

MDT08N06D Datasheet and Replacement


   Type Designator: MDT08N06D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 107 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 270 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: TO252
 

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MDT08N06D Datasheet (PDF)

 ..1. Size:910K  cn minos
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MDT08N06D

60V N-Channel Power MOSFETDescriptionThe MDT08N06 uses advanced trench technologyto provide excellent RDS(ON), low gate charge. It canbe used in a wide variety of applications.General Features V =60V, R

Datasheet: MD23N50 , MD33N25 , MD40N25 , MD9N90 , MDP18N20 , MDP2N60 , MDP5N65 , MDP9N20 , RU7088R , MPG180N10P , MPG180N10S , MPG200N08P , MPG200N08S , MPG30N06P , MPG30N10P , MPG40N10P , MPG60N10P .

History: MPG30N06P

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