MPG200N08P Datasheet. Specs and Replacement
Type Designator: MPG200N08P 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 270 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 200 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 950 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
Package: TO220
MPG200N08P substitution
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MPG200N08P datasheet
mpg200n08p mpg200n08s.pdf
80V N-Channel Power MOSFET DESCRIPTION The MPG200N08 uses advanced trench technology to provide excellent RDS(ON), low gate charge. It can be used in a wide variety of applications. KEY CHARACTERISTICS VDS = 80V,ID = 200A RDS(ON) ... See More ⇒
Detailed specifications: MD9N90, MDP18N20, MDP2N60, MDP5N65, MDP9N20, MDT08N06D, MPG180N10P, MPG180N10S, AO4407A, MPG200N08S, MPG30N06P, MPG30N10P, MPG40N10P, MPG60N10P, MPG60NF06P, MPG80N06P, MPG90N08P
Keywords - MPG200N08P MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
