All MOSFET. MPG60N10P Datasheet

 

MPG60N10P Datasheet and Replacement


   Type Designator: MPG60N10P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 160 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 60 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 225 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0165 Ohm
   Package: TO220
 

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MPG60N10P Datasheet (PDF)

 ..1. Size:659K  cn minos
 mpg60n10p mdt60n10d.pdf pdf_icon

MPG60N10P

DESCRIPTIONThe MPG60N10P uses advanced trench technology to provideexcellent RDS(ON), low gate charge. It can be used in a widevariety of applications.Application Power switching application Hard switched and High frequency circuits Uninterruptible power supplySchematic diagramKEY CHARACTERISTICS V = 100V,I = 60ADS DR

 8.1. Size:1035K  cn minos
 mpg60nf06p mdt60nf06d.pdf pdf_icon

MPG60N10P

60V N-Channel Power MOSFETDESCRIPTIONThe MPG60NF06 uses advanced trench technology toprovide excellent R , low gate charge. It can be used inDS(ON)a wide variety of applications.KEY CHARACTERISTICS V = 60V,I = 60ADS DR

Datasheet: MDT08N06D , MPG180N10P , MPG180N10S , MPG200N08P , MPG200N08S , MPG30N06P , MPG30N10P , MPG40N10P , IRFZ44N , MPG60NF06P , MPG80N06P , MPG90N08P , MPG90N08S , MPT012N08T , MPT023N10T , MPT028N10P , .

Keywords - MPG60N10P MOSFET datasheet

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