MPG60N10P Datasheet. Specs and Replacement
Type Designator: MPG60N10P 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 160 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 60 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 225 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0165 Ohm
Package: TO220
MPG60N10P substitution
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MPG60N10P datasheet
mpg60n10p mdt60n10d.pdf
DESCRIPTION The MPG60N10P uses advanced trench technology to provide excellent RDS(ON), low gate charge. It can be used in a wide variety of applications. Application Power switching application Hard switched and High frequency circuits Uninterruptible power supply Schematic diagram KEY CHARACTERISTICS V = 100V,I = 60A DS D R ... See More ⇒
mpg60nf06p mdt60nf06d.pdf
60V N-Channel Power MOSFET DESCRIPTION The MPG60NF06 uses advanced trench technology to provide excellent R , low gate charge. It can be used in DS(ON) a wide variety of applications. KEY CHARACTERISTICS V = 60V,I = 60A DS D R ... See More ⇒
Detailed specifications: MDT08N06D, MPG180N10P, MPG180N10S, MPG200N08P, MPG200N08S, MPG30N06P, MPG30N10P, MPG40N10P, IRFZ44N, MPG60NF06P, MPG80N06P, MPG90N08P, MPG90N08S, MPT012N08T, MPT023N10T, MPT028N10P, MDT12N10L
Keywords - MPG60N10P MOSFET specs
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MPG60N10P replacement
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