All MOSFET. MPG90N08S Datasheet

 

MPG90N08S Datasheet and Replacement


   Type Designator: MPG90N08S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 147 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 90 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 200 nS
   Cossⓘ - Output Capacitance: 280 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
   Package: TO263
 

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MPG90N08S Datasheet (PDF)

 ..1. Size:922K  cn minos
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MPG90N08S

80V N-Channel Power MOSFETDESCRIPTIONThe MPG90N08 uses advanced trench technology toprovide excellent R , low gate charge. It can be usedDS(ON)ina wide variety of applications.KEY CHARACTERISTICS V = 80V,I = 90ADS DR

Datasheet: MPG200N08S , MPG30N06P , MPG30N10P , MPG40N10P , MPG60N10P , MPG60NF06P , MPG80N06P , MPG90N08P , 20N60 , MPT012N08T , MPT023N10T , MPT028N10P , MDT12N10L , MDT13N10D , MDT15N10 , MDT15P04D , MDT18N10D .

History: MPG60N10P | MDT100N06

Keywords - MPG90N08S MOSFET datasheet

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