MPG90N08S Datasheet. Specs and Replacement
Type Designator: MPG90N08S 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 147 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 90 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 200 nS
Cossⓘ - Output Capacitance: 280 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
Package: TO263
MPG90N08S substitution
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MPG90N08S datasheet
mpg90n08p mpg90n08s.pdf
80V N-Channel Power MOSFET DESCRIPTION The MPG90N08 uses advanced trench technology to provide excellent R , low gate charge. It can be used DS(ON) ina wide variety of applications. KEY CHARACTERISTICS V = 80V,I = 90A DS D R ... See More ⇒
Detailed specifications: MPG200N08S, MPG30N06P, MPG30N10P, MPG40N10P, MPG60N10P, MPG60NF06P, MPG80N06P, MPG90N08P, 20N60, MPT012N08T, MPT023N10T, MPT028N10P, MDT12N10L, MDT13N10D, MDT15N10, MDT15P04D, MDT18N10D
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