MPT012N08T Datasheet. Specs and Replacement
Type Designator: MPT012N08T 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 462.9 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 360 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 51 nS
Cossⓘ - Output Capacitance: 3600 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0014 Ohm
Package: TOLL
MPT012N08T substitution
- MOSFET ⓘ Cross-Reference Search
MPT012N08T datasheet
mpt012n08t.pdf
Description MPT012N08-T, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 80 V DSS I 360 A D R 1.1 m DS(on).typ FEATURES TOLL8... See More ⇒
Detailed specifications: MPG30N06P, MPG30N10P, MPG40N10P, MPG60N10P, MPG60NF06P, MPG80N06P, MPG90N08P, MPG90N08S, IRF540N, MPT023N10T, MPT028N10P, MDT12N10L, MDT13N10D, MDT15N10, MDT15P04D, MDT18N10D, MDT18N20
Keywords - MPT012N08T MOSFET specs
MPT012N08T cross reference
MPT012N08T equivalent finder
MPT012N08T pdf lookup
MPT012N08T substitution
MPT012N08T replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
