All MOSFET. MPT012N08T Datasheet

 

MPT012N08T Datasheet and Replacement


   Type Designator: MPT012N08T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 462.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 360 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 51 nS
   Cossⓘ - Output Capacitance: 3600 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0014 Ohm
   Package: TOLL
 

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MPT012N08T Datasheet (PDF)

 ..1. Size:699K  cn minos
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MPT012N08T

DescriptionMPT012N08-T, the N-channel Enhanced PowerMOSFETs, is obtained by advanced double trenchtechnology which reduce the conduction loss,improve switching performance and enhance theavalanche energy. This is suitable device for BMSand high current switching applications.KEY CHARACTERISTICSParameter Value UnitV 80 VDSSI 360 ADR 1.1 mDS(on).typFEATURESTOLL8

Datasheet: MPG30N06P , MPG30N10P , MPG40N10P , MPG60N10P , MPG60NF06P , MPG80N06P , MPG90N08P , MPG90N08S , IRF540 , MPT023N10T , MPT028N10P , , , , , , .

History: MPT023N10T

Keywords - MPT012N08T MOSFET datasheet

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