All MOSFET. MPT023N10T Datasheet

 

MPT023N10T Datasheet and Replacement


   Type Designator: MPT023N10T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 416.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 326 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 26 nS
   Cossⓘ - Output Capacitance: 1715 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0018 Ohm
   Package: TOLL
 

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MPT023N10T Datasheet (PDF)

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MPT023N10T

DescriptionMPT023N10-T, the N-channel Enhanced PowerMOSFETs, is obtained by advanced double trenchtechnology which reduce the conduction loss,improve switching performance and enhance theavalanche energy. This is suitable device for BMSand high current switching applications.KEY CHARACTERISTICSParameter Value UnitV 100 VDSSI 326 ADR 1.4 mDS( on).typFEATURES

 9.1. Size:859K  cn minos
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MPT023N10T

100V N-Channel Power MOSFETDescriptionMPT028N10,the N-channel Enhanced Power MOSFETs,is obtained by advanced double trench technology whichreduce the conduction loss,improve switching performanceand enhance the avalanche energy. This is suitable devicefor BMS and high current switching applications.General Features V =100V, R

Datasheet: MPG30N10P , MPG40N10P , MPG60N10P , MPG60NF06P , MPG80N06P , MPG90N08P , MPG90N08S , MPT012N08T , IRF540N , MPT028N10P , , , , , , , .

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