MPT023N10T Datasheet. Specs and Replacement
Type Designator: MPT023N10T 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 416.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 326 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 26 nS
Cossⓘ - Output Capacitance: 1715 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0018 Ohm
Package: TOLL
MPT023N10T substitution
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MPT023N10T datasheet
mpt023n10t.pdf
Description MPT023N10-T, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 100 V DSS I 326 A D R 1.4 m DS( on).typ FEATURES ... See More ⇒
mpt028n10p mpt028n10s.pdf
100V N-Channel Power MOSFET Description MPT028N10,the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss,improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. General Features V =100V, R ... See More ⇒
Detailed specifications: MPG30N10P, MPG40N10P, MPG60N10P, MPG60NF06P, MPG80N06P, MPG90N08P, MPG90N08S, MPT012N08T, IRF540, MPT028N10P, MDT12N10L, MDT13N10D, MDT15N10, MDT15P04D, MDT18N10D, MDT18N20, MDT20N06
Keywords - MPT023N10T MOSFET specs
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