MPT028N10P Datasheet. Specs and Replacement
Type Designator: MPT028N10P 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 250 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 180 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 1130 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm
Package: TO220
MPT028N10P substitution
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MPT028N10P datasheet
mpt028n10p mpt028n10s.pdf
100V N-Channel Power MOSFET Description MPT028N10,the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss,improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. General Features V =100V, R ... See More ⇒
mpt023n10t.pdf
Description MPT023N10-T, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 100 V DSS I 326 A D R 1.4 m DS( on).typ FEATURES ... See More ⇒
Detailed specifications: MPG40N10P, MPG60N10P, MPG60NF06P, MPG80N06P, MPG90N08P, MPG90N08S, MPT012N08T, MPT023N10T, 50N06, MDT12N10L, MDT13N10D, MDT15N10, MDT15P04D, MDT18N10D, MDT18N20, MDT20N06, MDT20P04D
Keywords - MPT028N10P MOSFET specs
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MPT028N10P replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
