All MOSFET. MDT15P04D Datasheet

 

MDT15P04D Datasheet and Replacement


   Type Designator: MDT15P04D
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 15 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 85 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
   Package: TO252
 

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MDT15P04D Datasheet (PDF)

 ..1. Size:766K  cn minos
 mdt15p04d.pdf pdf_icon

MDT15P04D

Silicon P-Channel Power MOSFETDescriptionThe MDT15P04D uses advanced trench technology to provideexcellent R , low gate charge. It can be used in a wide varietyDS(ON)of applications.KEY CHARACTERISTICS V = -40V,I =-15ADS D R

 9.1. Size:995K  cn minos
 mdt15n10.pdf pdf_icon

MDT15P04D

100V N-Channel Power MOSFETDescriptionMDT15N10, the uses advanced trench technology to provideexcellent R , low gate charge. It can be used in a wide varietyDS(ON)of applicationsKEY CHARACTERISTICSV =100V,ID=15ADSR

Datasheet: MPG90N08P , MPG90N08S , MPT012N08T , MPT023N10T , MPT028N10P , MDT12N10L , MDT13N10D , MDT15N10 , IRF1404 , MDT18N10D , MDT18N20 , MDT20N06 , MDT20P04D , MDT2N60 , MDT30N06L , MDT30N10 , MDT30N10D .

History: NDP608A | NDP610A | MDT18N20

Keywords - MDT15P04D MOSFET datasheet

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