MDT15P04D Datasheet. Specs and Replacement
Type Designator: MDT15P04D 📄📄
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 15 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 4 nS
Cossⓘ - Output Capacitance: 85 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
Package: TO252
MDT15P04D substitution
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MDT15P04D datasheet
mdt15p04d.pdf
Silicon P-Channel Power MOSFET Description The MDT15P04D uses advanced trench technology to provide excellent R , low gate charge. It can be used in a wide variety DS(ON) of applications. KEY CHARACTERISTICS V = -40V,I =-15A DS D R ... See More ⇒
mdt15n10.pdf
100V N-Channel Power MOSFET Description MDT15N10, the uses advanced trench technology to provide excellent R , low gate charge. It can be used in a wide variety DS(ON) of applications KEY CHARACTERISTICS V =100V,ID=15A DS R ... See More ⇒
Detailed specifications: MPG90N08P, MPG90N08S, MPT012N08T, MPT023N10T, MPT028N10P, MDT12N10L, MDT13N10D, MDT15N10, IRF1404, MDT18N10D, MDT18N20, MDT20N06, MDT20P04D, MDT2N60, MDT30N06L, MDT30N10, MDT30N10D
Keywords - MDT15P04D MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
