MDT18N20 Datasheet. Specs and Replacement
Type Designator: MDT18N20 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 130 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 18 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 52 nS
Cossⓘ - Output Capacitance: 450 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
Package: TO252
MDT18N20 substitution
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MDT18N20 datasheet
mdt18n20.pdf
Silicon N-Channel Power MOSFET Description MDT18N20, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Schematic diagram V =200V,I =18A... See More ⇒
mp18n20 mpf18n20 mdp18n20 mdt18n20.pdf
Description MP18N20, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Parameter Value Unit V 200 V DS I 18 A D R 0.13 DS(ON).Typ... See More ⇒
mdt18n10d.pdf
100V N-Channel Power MOSFET DESCRIPTION The MDT18N10D uses advanced trench technology to provide excellent RDS(ON), low gate charge. It can be used in a wide variety of applications. Application Power switching application Hard switched and High frequency circuits Uninterruptible power supply Schematic diagram KEY CHARACTERISTICS V = 100V,I = 18A DS D R ... See More ⇒
Detailed specifications: MPT012N08T, MPT023N10T, MPT028N10P, MDT12N10L, MDT13N10D, MDT15N10, MDT15P04D, MDT18N10D, IRFB4110, MDT20N06, MDT20P04D, MDT2N60, MDT30N06L, MDT30N10, MDT30N10D, MDT40N06D, MDT40N10D
Keywords - MDT18N20 MOSFET specs
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