MDT30N10D Datasheet and Replacement
Type Designator: MDT30N10D
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 70 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 30 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 13 nS
Cossⓘ - Output Capacitance: 225 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
Package: TO252
MDT30N10D substitution
MDT30N10D Datasheet (PDF)
mdt30n10d mpg30n10p.pdf
100V N-Channel Power MOSFETDESCRIPTIONThe MPG30N10 uses advanced trench technology toprovideexcellent R , low gate charge. It can be used in a wideDS(ON)variety of applications.KEY CHARACTERISTICS V = 100V,I =30ADS DR
mdt30n10.pdf
100V N-Channel Power MOSFETDESCRIPTIONThe MDT30N10 uses advanced trench technology toprovide excellent R , low gate charge. It can be usedDS(ON)in a wide variety of applications.KEY CHARACTERISTICS V = 100V,I = 30A R
mdt30n06l.pdf
60V N-Channel Power MOSFETDESCRIPTIONThe MDT30N06L uses advanced trench technology toprovide excellent RDS(ON), low gate charge. It can be usedin a wide variety of applications.KEY CHARACTERISTICS VDS = 60V,ID= 30ARDS(ON)
mmdt3052dw.pdf
MMDT3052DW ( NPN+NPN) Silicon Epitaxial Planar TransistorFeatures Each transistor elements are independentApplications For low frequency amplify applicationMARKING: 5GParameter Symbol Value UnitCollector Base Voltage VCBO 50 VCollector Emitter Voltage VCEO 50 VEmitter Base Voltage VEBO 6 VCollector Current IC 200 mAPower Dissipation Ptot 150 mWJunction Temperature
Datasheet: MDT15P04D , MDT18N10D , MDT18N20 , MDT20N06 , MDT20P04D , MDT2N60 , MDT30N06L , MDT30N10 , 10N60 , MDT40N06D , MDT40N10D , MDT50N06D , MPF2N60 , MPF3N150 , MPF40N25 , MPF50N25 , MPF5N65 .
Keywords - MDT30N10D MOSFET datasheet
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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