MDT30N10D datasheet, подбор замены

 ..1. Size:951K  cn minos
 mdt30n10d mpg30n10p.pdf 

100V N-Channel Power MOSFET DESCRIPTION The MPG30N10 uses advanced trench technology toprovide excellent R , low gate charge. It can be used in a wide DS(ON) variety of applications. KEY CHARACTERISTICS V = 100V,I =30A DS D R

 6.1. Size:936K  cn minos
 mdt30n10.pdf 

100V N-Channel Power MOSFET DESCRIPTION The MDT30N10 uses advanced trench technology to provide excellent R , low gate charge. It can be used DS(ON) in a wide variety of applications. KEY CHARACTERISTICS V = 100V,I = 30A R

 8.1. Size:962K  cn minos
 mdt30n06l.pdf 

60V N-Channel Power MOSFET DESCRIPTION The MDT30N06L uses advanced trench technology to provide excellent RDS(ON), low gate charge. It can be used in a wide variety of applications. KEY CHARACTERISTICS VDS = 60V,ID= 30A RDS(ON)

 9.1. Size:492K  cn cbi
 mmdt3052dw.pdf 

MMDT3052DW ( NPN+NPN) Silicon Epitaxial Planar Transistor Features Each transistor elements are independent Applications For low frequency amplify application MARKING 5G Parameter Symbol Value Unit Collector Base Voltage VCBO 50 V Collector Emitter Voltage VCEO 50 V Emitter Base Voltage VEBO 6 V Collector Current IC 200 mA Power Dissipation Ptot 150 mW Junction Temperature

 9.2. Size:724K  cn minos
 mdt30p10d.pdf 

MDT30P10D Silicon Silicon P-Channel Power MOSFET Description The MDT30P10D uses advanced technology and design to provide excellent RDS(ON) . It can be used in a wide variety of applications. General Features VDS=-110V, ID=-30A Low ON Resistance Low Reverse transfer capacitances 100% Single Pulse avalanche energy Test Application Power switching applicati