MDT5N65 Datasheet and Replacement
Type Designator: MDT5N65
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 97 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 23 nS
Cossⓘ - Output Capacitance: 87 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.35 Ohm
Package: TO252
MDT5N65 substitution
MDT5N65 Datasheet (PDF)
mpf5n65 mp5n65 mdp5n65 mdt5n65.pdf

650V N-Channel MOSFETFEATURESFast switching100% avalanche testedImproved dv/dt capabilityAPPLICATIONSSwitch Mode Power Supply (SMPS)Uninterruptible Power Supply (UPS)Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingMPF5N65 TO-220F MPF5N65MP5N65 TO-220C 5N65MDP5N65 TO-251 5N65MDT5N65 TO-252 5N65Absolute Maxim
Datasheet: MPF5N65 , MPF8N65 , MPF9N20 , MPG100N06P , MPG100N06S , MPG100N07P , MPG100N07S , MPG100N08P , IRLB4132 , MDT60N06D , MDT60N10D , MDT60NF06D , MDT70N03 , MDT7N65 , MDT9N20 , MLS60R380D , MLS65R380D .
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