MDT60NF06D Datasheet. Specs and Replacement
Type Designator: MDT60NF06D 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 87 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 60 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 6 nS
Cossⓘ - Output Capacitance: 100 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
Package: TO252
MDT60NF06D substitution
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MDT60NF06D datasheet
mpg60nf06p mdt60nf06d.pdf
60V N-Channel Power MOSFET DESCRIPTION The MPG60NF06 uses advanced trench technology to provide excellent R , low gate charge. It can be used in DS(ON) a wide variety of applications. KEY CHARACTERISTICS V = 60V,I = 60A DS D R ... See More ⇒
mdt60n10d.pdf
100V N-Channel Power MOSFET DESCRIPTION The MDT60N10D uses advanced trench technology to provide excellent RDS(ON), low gate charge. It can be used in a wide variety of applications. KEY CHARACTERISTICS V = 100V,I = 60A R ... See More ⇒
mdt60n06d.pdf
60V N-Channel Power MOSFE Description The MDT60N06 uses advanced trench technology to provide excellent RDS(ON), low gate charge. It can be used in a wide variety of applications. General Features V =60V, R ... See More ⇒
mpg60n10p mdt60n10d.pdf
DESCRIPTION The MPG60N10P uses advanced trench technology to provide excellent RDS(ON), low gate charge. It can be used in a wide variety of applications. Application Power switching application Hard switched and High frequency circuits Uninterruptible power supply Schematic diagram KEY CHARACTERISTICS V = 100V,I = 60A DS D R ... See More ⇒
Detailed specifications: MPG100N06P, MPG100N06S, MPG100N07P, MPG100N07S, MPG100N08P, MDT5N65, MDT60N06D, MDT60N10D, IRFP260, MDT70N03, MDT7N65, MDT9N20, MLS60R380D, MLS65R380D, MLS65R580D, MP11P20, MP150N08P
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