MDT60NF06D - аналоги, даташиты, параметры транзистора

MDT60NF06D Datasheet (PDF)

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60V N-Channel Power MOSFETDESCRIPTIONThe MPG60NF06 uses advanced trench technology toprovide excellent R , low gate charge. It can be used inDS(ON)a wide variety of applications.KEY CHARACTERISTICS V = 60V,I = 60ADS DR

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100V N-Channel Power MOSFETDESCRIPTIONThe MDT60N10D uses advanced trench technology toprovide excellent RDS(ON), low gate charge. It can be usedin a wide variety of applications.KEY CHARACTERISTICS V = 100V,I = 60A R

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60V N-Channel Power MOSFEDescriptionThe MDT60N06 uses advanced trench technologyto provide excellent RDS(ON), low gate charge. It canbe used in a wide variety of applications.General Features V =60V, R

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DESCRIPTIONThe MPG60N10P uses advanced trench technology to provideexcellent RDS(ON), low gate charge. It can be used in a widevariety of applications.Application Power switching application Hard switched and High frequency circuits Uninterruptible power supplySchematic diagramKEY CHARACTERISTICS V = 100V,I = 60ADS DR

Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF9540 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .