MP180N06P Datasheet and Replacement
Type Designator: MP180N06P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 270 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 180 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 950 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
Package: TO220
MP180N06P substitution
MP180N06P Datasheet (PDF)
mp180n06p mp180n06p.pdf
60V N-Channel Power MOSFETDESCRIPTIONThe MP180N06 uses advanced trench technology to provideexcellent R ), low gate charge. It can be used in a wideDS(ONvariety of applications.Schematic diagramKEY CHARACTERISTICSV =60V,I = 180A R
Datasheet: MDT70N03 , MDT7N65 , MDT9N20 , MLS60R380D , MLS65R380D , MLS65R580D , MP11P20 , MP150N08P , TK10A60D , MP18N20 , MP20N40P , MP3205B , MP40N20 , MP50N06 , MP5N65 , MP70N10 , MP9N20 .
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