All MOSFET. MP180N06P Datasheet

 

MP180N06P Datasheet and Replacement


   Type Designator: MP180N06P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 270 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 180 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 950 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
   Package: TO220
 

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MP180N06P Datasheet (PDF)

 ..1. Size:1083K  cn minos
 mp180n06p mp180n06p.pdf pdf_icon

MP180N06P

60V N-Channel Power MOSFETDESCRIPTIONThe MP180N06 uses advanced trench technology to provideexcellent R ), low gate charge. It can be used in a wideDS(ONvariety of applications.Schematic diagramKEY CHARACTERISTICSV =60V,I = 180A R

Datasheet: MDT70N03 , MDT7N65 , MDT9N20 , MLS60R380D , MLS65R380D , MLS65R580D , MP11P20 , MP150N08P , IRF530 , MP18N20 , MP20N40P , , , , , , .

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