All MOSFET. MP50N06 Datasheet

 

MP50N06 Datasheet and Replacement


   Type Designator: MP50N06
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 90 nS
   Cossⓘ - Output Capacitance: 225 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
   Package: TO220
 

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MP50N06 Datasheet (PDF)

 ..1. Size:697K  cn minos
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MP50N06

Silicon N-Channel Power MOSFETDescriptionThe MP50N06 uses advanced trench technology anddesign to provide Excellent R . It can be used in aDS(ON)wide variety of applications.General FeaturesSchematic diagram V =60V,I =50ADS DR 14m @V =10V (Typ:11.0 m)dson GSR n16m @V =4.5V (Typ:12.5m)dso GS Low ON Resistance Low Reverse transfer capacitances

Datasheet: MLS65R580D , MP11P20 , MP150N08P , MP180N06P , MP18N20 , MP20N40P , MP3205B , MP40N20 , AON6380 , MP5N65 , MP70N10 , MP9N20 , MPF12N65 , MPF13N50 , MPF18N20 , MPF20N50 , AP15N04S .

History: STD4NA40-1

Keywords - MP50N06 MOSFET datasheet

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