MP50N06 Datasheet. Specs and Replacement
Type Designator: MP50N06 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 90 nS
Cossⓘ - Output Capacitance: 225 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
Package: TO220
MP50N06 substitution
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MP50N06 datasheet
mp50n06.pdf
Silicon N-Channel Power MOSFET Description The MP50N06 uses advanced trench technology and design to provide Excellent R . It can be used in a DS(ON) wide variety of applications. General Features Schematic diagram V =60V,I =50A DS D R 14m @V =10V (Typ 11.0 m ) dson GS R n 16m @V =4.5V (Typ 12.5m ) dso GS Low ON Resistance Low Reverse transfer capacitances ... See More ⇒
Detailed specifications: MLS65R580D, MP11P20, MP150N08P, MP180N06P, MP18N20, MP20N40P, MP3205B, MP40N20, NCEP15T14, MP5N65, MP70N10, MP9N20, MPF12N65, MPF13N50, MPF18N20, MPF20N50, AP15N04S
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
