MP70N10 Datasheet. Specs and Replacement
Type Designator: MP70N10 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 200 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 70 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 28 nS
Cossⓘ - Output Capacitance: 610 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.021 Ohm
Package: TO220
MP70N10 substitution
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MP70N10 datasheet
mp70n10.pdf
100V N-Channel MOSFET Description MP70N10, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. FEATURES Schematic diagram 1 V =100V,I =70A R ... See More ⇒
Detailed specifications: MP150N08P, MP180N06P, MP18N20, MP20N40P, MP3205B, MP40N20, MP50N06, MP5N65, STP80NF70, MP9N20, MPF12N65, MPF13N50, MPF18N20, MPF20N50, AP15N04S, AP3416AI, AP4N06SI
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