All MOSFET. MP70N10 Datasheet

 

MP70N10 Datasheet and Replacement


   Type Designator: MP70N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 200 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 70 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 28 nS
   Cossⓘ - Output Capacitance: 610 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.021 Ohm
   Package: TO220
 

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MP70N10 Datasheet (PDF)

 ..1. Size:1123K  cn minos
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MP70N10

100V N-Channel MOSFETDescriptionMP70N10, the silicon N-channel Enhanced MOSFETs, isobtained by advanced MOSFET technology which reduce theconduction loss, improve switching performance and enhancethe avalanche energy. The transistor is suitable device for SMPS,high speed switching and general purpose applications.FEATURES Schematic diagram1 V =100V,I =70A R

Datasheet: MP150N08P , MP180N06P , MP18N20 , MP20N40P , MP3205B , MP40N20 , MP50N06 , MP5N65 , 18N50 , MP9N20 , MPF12N65 , MPF13N50 , MPF18N20 , MPF20N50 , AP15N04S , AP3416AI , AP4N06SI .

History: AP4N06SI | AP60N02BD | MPF12N65 | MPF20N50

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