All MOSFET. MP70N10 Datasheet

 

MP70N10 Datasheet and Replacement


   Type Designator: MP70N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 200 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 70 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 28 nS
   Cossⓘ - Output Capacitance: 610 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.021 Ohm
   Package: TO220

 MP70N10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MP70N10 Datasheet (PDF)

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MP70N10

100V N-Channel MOSFET Description MP70N10, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. FEATURES Schematic diagram 1 V =100V,I =70A R ... See More ⇒

Datasheet: MP150N08P , MP180N06P , MP18N20 , MP20N40P , MP3205B , MP40N20 , MP50N06 , MP5N65 , STP80NF70 , MP9N20 , MPF12N65 , MPF13N50 , MPF18N20 , MPF20N50 , AP15N04S , AP3416AI , AP4N06SI .

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