All MOSFET. MPF13N50 Datasheet

 

MPF13N50 Datasheet and Replacement


   Type Designator: MPF13N50
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 13 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 190 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.55 Ohm
   Package: TO220F
 

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MPF13N50 Datasheet (PDF)

 ..1. Size:541K  cn minos
 mpf13n50.pdf pdf_icon

MPF13N50

Silicon N-Channel Power MOSFETDescriptionThe MPF13N50 uses advanced technology and design to provideexcellent RDS(ON) . It can be used in a wide variety of applications.General FeaturesV =500V,I =13ADS DSchematic diagramLow ON ResistanceLow Reverse transfer capacitances100% Single Pulse avalanche energy TestApplicationPower switching applicationAdapte

 0.1. Size:336K  trinnotech
 tmp13n50 tmpf13n50.pdf pdf_icon

MPF13N50

TMP13N50/TMPF13N50TMP13N50G/TMPF13N50GVDSS = 550 V @TjmaxFeaturesID = 13A Low gate chargeRDS(on) = 0.48 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC QualificationDGSDevice Package Marking RemarkTMP13N50 / TMPF13N50 TO-220 / TO-220F TMP13N50 / TMPF13N50 RoHSTMP13N50G / TMPF13N50G

 0.2. Size:429K  trinnotech
 tmpf13n50a.pdf pdf_icon

MPF13N50

TMPF13N50A N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 500V 13A

 0.3. Size:1002K  jiejie micro
 jmpf13n50bj.pdf pdf_icon

MPF13N50

JMPF13N50BJDescriptionJMP N-channel Enhancement Mode Power MOSFETFeaturesApplications 500V, 13A Load SwitchRDS(ON)

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Datasheet: MP20N40P , MP3205B , MP40N20 , MP50N06 , MP5N65 , MP70N10 , MP9N20 , MPF12N65 , IRFP450 , MPF18N20 , MPF20N50 , AP15N04S , AP3416AI , AP4N06SI , AP50N03S , AP50N06Y , AP60N02BD .

History: AP50N06Y | TPD65R750C | MPF18N20 | US6K4 | AP3416AI

Keywords - MPF13N50 MOSFET datasheet

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