AP3416AI Datasheet. Specs and Replacement

Type Designator: AP3416AI  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 6.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30 nS

Cossⓘ - Output Capacitance: 140 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm

Package: SOT23

AP3416AI substitution

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AP3416AI datasheet

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AP3416AI

AP3416AI 20V N-Channel Enhancement Mode MOSFET Description The AP3416AI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 20V I =6.8A DS D R ... See More ⇒

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AP3416AI

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AP3416AI

AP3410MI 30V N-Channel Enhancement Mode MOSFET Description The AP3410MI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =6A DS D R ... See More ⇒

 9.3. Size:1148K  cn apm
 ap3415a.pdf pdf_icon

AP3416AI

AP3415A -20V P-Channel Enhancement Mode MOSFET Description The AP3415A uses advanced trench It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide var... See More ⇒

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Detailed specifications: MP5N65, MP70N10, MP9N20, MPF12N65, MPF13N50, MPF18N20, MPF20N50, AP15N04S, IRF1407, AP4N06SI, AP50N03S, AP50N06Y, AP60N02BD, AP130N20MP, AP3404MI, AP50N06DF, AP6G04S

Keywords - AP3416AI MOSFET specs

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