AP4N06SI Datasheet. Specs and Replacement
Type Designator: AP4N06SI 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 4.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 7.2 nS
Cossⓘ - Output Capacitance: 38 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.095 Ohm
Package: SOT89
AP4N06SI substitution
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AP4N06SI datasheet
ap4n06si.pdf
AP4N06SI 60V N-Channel Enhancement Mode MOSFET Description The AP4N06SI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =60V I =4.8A DS D R ... See More ⇒
Detailed specifications: MP70N10, MP9N20, MPF12N65, MPF13N50, MPF18N20, MPF20N50, AP15N04S, AP3416AI, 2SK3568, AP50N03S, AP50N06Y, AP60N02BD, AP130N20MP, AP3404MI, AP50N06DF, AP6G04S, AP70N03DF
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