All MOSFET. AP130N20MP Datasheet

 

AP130N20MP Datasheet and Replacement


   Type Designator: AP130N20MP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 450 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 130 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 70 nS
   Cossⓘ - Output Capacitance: 980 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
   Package: TO247
 

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AP130N20MP Datasheet (PDF)

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AP130N20MP

AP130N20MP 200V N-Channel Enhancement Mode MOSFET Description The AP130N20P is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. G

Datasheet: MPF18N20 , MPF20N50 , AP15N04S , AP3416AI , AP4N06SI , AP50N03S , AP50N06Y , AP60N02BD , 2N60 , AP3404MI , AP50N06DF , AP6G04S , AP70N03DF , AP80N08D , AP80N08NF , AP80P01NF , AP8P10S .

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