AP130N20MP Datasheet. Specs and Replacement
Type Designator: AP130N20MP 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 450 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 130 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 70 nS
Cossⓘ - Output Capacitance: 980 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
Package: TO247
AP130N20MP substitution
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AP130N20MP datasheet
ap130n20mp.pdf
AP130N20MP 200V N-Channel Enhancement Mode MOSFET Description The AP130N20P is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. G... See More ⇒
Detailed specifications: MPF18N20, MPF20N50, AP15N04S, AP3416AI, AP4N06SI, AP50N03S, AP50N06Y, AP60N02BD, SI2302, AP3404MI, AP50N06DF, AP6G04S, AP70N03DF, AP80N08D, AP80N08NF, AP80P01NF, AP8P10S
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