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AP70N03DF Spec and Replacement


   Type Designator: AP70N03DF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 59 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 70 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 267 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
   Package: PDFN3X3-8L

 AP70N03DF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AP70N03DF Specs

 ..1. Size:4048K  cn apm
ap70n03df.pdf pdf_icon

AP70N03DF

AP70N03DF 30V N-Channel Enhancement Mode MOSFET Description The AP70N03DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =70A DS D R ... See More ⇒

 7.1. Size:2676K  cn apm
ap70n03nf.pdf pdf_icon

AP70N03DF

AP70N03NF 30V N-Channel Enhancement Mode MOSFET Description The AP70N03NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =70A DS D R ... See More ⇒

 8.1. Size:1530K  cn apm
ap70n04nf.pdf pdf_icon

AP70N03DF

AP70N04NF 40V N-Channel Enhancement Mode MOSFET Description The AP70N04NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =70 A DS D R ... See More ⇒

 8.2. Size:1310K  cn apm
ap70n02df.pdf pdf_icon

AP70N03DF

AP70N02DF 20V N-Channel Enhancement Mode MOSFET Description The AP70N02DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =20V I =70A DS D R ... See More ⇒

Detailed specifications: AP4N06SI , AP50N03S , AP50N06Y , AP60N02BD , AP130N20MP , AP3404MI , AP50N06DF , AP6G04S , IRF520 , AP80N08D , AP80N08NF , AP80P01NF , AP8P10S , AP90N06D , APG12N10D , AP10G04DF , AP10H03DF .

Keywords - AP70N03DF MOSFET specs

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