AP70N03DF - аналоги и даташиты транзистора

 

AP70N03DF - Даташиты. Аналоги. Основные параметры


   Наименование производителя: AP70N03DF
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 59 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 70 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 15 ns
   Cossⓘ - Выходная емкость: 267 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0055 Ohm
   Тип корпуса: PDFN3X3-8L

 Аналог (замена) для AP70N03DF

 

AP70N03DF Datasheet (PDF)

 ..1. Size:4048K  cn apm
 ap70n03df.pdf pdf_icon

AP70N03DF

AP70N03DF 30V N-Channel Enhancement Mode MOSFET Description The AP70N03DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =70A DS D R

 7.1. Size:2676K  cn apm
 ap70n03nf.pdf pdf_icon

AP70N03DF

AP70N03NF 30V N-Channel Enhancement Mode MOSFET Description The AP70N03NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =70A DS D R

 8.1. Size:1530K  cn apm
 ap70n04nf.pdf pdf_icon

AP70N03DF

AP70N04NF 40V N-Channel Enhancement Mode MOSFET Description The AP70N04NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =70 A DS D R

 8.2. Size:1310K  cn apm
 ap70n02df.pdf pdf_icon

AP70N03DF

AP70N02DF 20V N-Channel Enhancement Mode MOSFET Description The AP70N02DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =20V I =70A DS D R

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... AP4N06SI , AP50N03S , AP50N06Y , AP60N02BD , AP130N20MP , AP3404MI , AP50N06DF , AP6G04S , IRF520 , AP80N08D , AP80N08NF , AP80P01NF , AP8P10S , AP90N06D , APG12N10D , AP10G04DF , AP10H03DF .

History: PSMN021-100YL | 2SJ546

 

 
Back to Top

 


 
.