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APG12N10D Spec and Replacement


   Type Designator: APG12N10D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 17 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 3.5 nS
   Cossⓘ - Output Capacitance: 28.9 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.125 Ohm
   Package: TO252

 APG12N10D Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

APG12N10D Specs

 ..1. Size:3062K  cn apm
apg12n10d.pdf pdf_icon

APG12N10D

APG12N10D 100V N-SGT Enhancement Mode MOSFET General Description APG12N10D use advanced SGT MOSFET technology to provide low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics. This device is specially designed to get better ruggedness and suitable to use in Features Low RDS(on) & FOM Extremely low switching loss Excellent stability and unifo... See More ⇒

 9.1. Size:1614K  cn apm
apg120n12nf.pdf pdf_icon

APG12N10D

APG120N12NF 100V N-SGT Enhancement Mode MOSFET Description The APG120N12NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 120V I =120 A DS D R ... See More ⇒

 9.2. Size:2679K  cn apm
apg120n04nf.pdf pdf_icon

APG12N10D

APG120N04NF 40V N-SGT Enhancement Mode MOSFET General Description APG120N04NF use advanced SGT MOSFET technology to provide low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics. This device is specially designed to get better ruggedness and suitable to use in Features Low RDS(on) & FOM Extremely low switching loss Excellent stability and un... See More ⇒

 9.3. Size:1308K  cn apm
apg120n10nf.pdf pdf_icon

APG12N10D

APG120N10NF 100V N-Channel Enhancement Mode MOSFET Description The APG120N10NF uses advanced APM-SGT technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =120A DS D R ... See More ⇒

Detailed specifications: AP50N06DF , AP6G04S , AP70N03DF , AP80N08D , AP80N08NF , AP80P01NF , AP8P10S , AP90N06D , P60NF06 , AP10G04DF , AP10H03DF , AP10H03S , AP15P04S , AP3400MI , AP34N20P , AP50P02DF , AP70H06NF .

Keywords - APG12N10D MOSFET specs

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