APG12N10D datasheet, аналоги, основные параметры

Наименование производителя: APG12N10D  📄📄 

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 17 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 100 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 12 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 3.5 ns

Cossⓘ - Выходная емкость: 28.9 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.125 Ohm

Тип корпуса: TO252

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Аналог (замена) для APG12N10D

- подборⓘ MOSFET транзистора по параметрам

 

APG12N10D даташит

 ..1. Size:3062K  cn apm
 apg12n10d.pdf pdf_icon

APG12N10D

APG12N10D 100V N-SGT Enhancement Mode MOSFET General Description APG12N10D use advanced SGT MOSFET technology to provide low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics. This device is specially designed to get better ruggedness and suitable to use in Features Low RDS(on) & FOM Extremely low switching loss Excellent stability and unifo

 9.1. Size:1614K  cn apm
 apg120n12nf.pdf pdf_icon

APG12N10D

APG120N12NF 100V N-SGT Enhancement Mode MOSFET Description The APG120N12NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 120V I =120 A DS D R

 9.2. Size:2679K  cn apm
 apg120n04nf.pdf pdf_icon

APG12N10D

APG120N04NF 40V N-SGT Enhancement Mode MOSFET General Description APG120N04NF use advanced SGT MOSFET technology to provide low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics. This device is specially designed to get better ruggedness and suitable to use in Features Low RDS(on) & FOM Extremely low switching loss Excellent stability and un

 9.3. Size:1308K  cn apm
 apg120n10nf.pdf pdf_icon

APG12N10D

APG120N10NF 100V N-Channel Enhancement Mode MOSFET Description The APG120N10NF uses advanced APM-SGT technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =120A DS D R

ПОКАЗАТЬ ЕЩЁ

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