All MOSFET. AP50P02DF Datasheet

 

AP50P02DF Datasheet and Replacement


   Type Designator: AP50P02DF
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 29 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 76.8 nS
   Cossⓘ - Output Capacitance: 509 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: PDFN3X3-8L
 

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AP50P02DF Datasheet (PDF)

 ..1. Size:2802K  cn apm
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AP50P02DF

AP50P02DF -20V P-Channel Enhancement Mode MOSFET Description The AP50P02DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -20V I =-50A DS D6.8m) R

 9.1. Size:164K  ape
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AP50P02DF

AP50PN520RHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 500VD Fast Switching Characteristic RDS(ON) 0.52 Simple Drive Requirement ID 12AG RoHS Compliant & Halogen-FreeSDescriptionAP50PN520 series are from Advanced Power innovated design andsilicon process technology to achieve the lowe

Datasheet: AP90N06D , APG12N10D , AP10G04DF , AP10H03DF , AP10H03S , AP15P04S , AP3400MI , AP34N20P , 60N06 , AP70H06NF , AP80N06D , AP85N03NF , AP8G04S , AP10N04S , AP15G04NF , AP220N06MP , AP2301AI .

History: JMSH0401ATL

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