AP50P02DF - Даташиты. Аналоги. Основные параметры

AP50P02DF -20V P-Channel Enhancement Mode MOSFET Description The AP50P02DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -20V I =-50A DS D 6.8m ) R

AP50P03D -30V P-Channel Enhancement Mode MOSFET Description The AP50P03D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-50A DS D R

AP50P03DF -30V P-Channel Enhancement Mode MOSFET Description The AP50P03DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-50 A DS D R

AP50P04D -40V P-Channel Enhancement Mode MOSFET Description The AP50P04D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -40V I =-50 A DS D R

AP50P04DF -40V P-Channel Enhancement Mode MOSFET Description The AP50P04NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -40V I =-50 A DS D R

AP50P06PIT -60V P-Channel Enhancement Mode MOSFET Description The AP50P06P uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-50A DS D R

AP50P03NF 30V P-Channel Enhancement Mode MOSFET Description The AP50P03NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-50A DS D R