All MOSFET. AP90N08NF Datasheet

 

AP90N08NF Datasheet and Replacement


   Type Designator: AP90N08NF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 180 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 85 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 95 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 38 nS
   Cossⓘ - Output Capacitance: 546 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0052 Ohm
   Package: PDFN5X6-8L
 

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AP90N08NF Datasheet (PDF)

 ..1. Size:1744K  cn apm
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AP90N08NF

AP90N08NF 85V N-Channel Enhancement Mode MOSFET Description The AP90N08NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 85V I =95A DS DR

 8.1. Size:588K  1
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AP90N08NF

 8.2. Size:2408K  cn apm
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AP90N08NF

AP90N06D 60V N-Channel Enhancement Mode MOSFET Description The AP90N06D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =90A DS DR

Datasheet: AP15G04NF , AP220N06MP , AP2301AI , AP2302AI , AP3P06MI , AP4606B , AP4G02LI , AP8P06S , 5N50 , , , , , , , , .

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