AP90N08NF Spec and Replacement
Type Designator: AP90N08NF
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pd ⓘ
- Maximum Power Dissipation: 180
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 85
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Id| ⓘ - Maximum Drain Current: 95
A
Tj ⓘ - Maximum Junction Temperature: 150
°C
tr ⓘ - Rise Time: 38
nS
Cossⓘ -
Output Capacitance: 546
pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0052
Ohm
Package:
PDFN5X6-8L
AP90N08NF Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AP90N08NF Specs
..1. Size:1744K cn apm
ap90n08nf.pdf 
AP90N08NF 85V N-Channel Enhancement Mode MOSFET Description The AP90N08NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 85V I =95A DS D R ... See More ⇒
8.7. Size:1234K cn apm
ap90n02d.pdf
AP90N02D 20V N-Channel Enhancement Mode MOSFET Description The AP90N02D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 20V I =90A DS D R ... See More ⇒
8.8. Size:2408K cn apm
ap90n06d.pdf
AP90N06D 60V N-Channel Enhancement Mode MOSFET Description The AP90N06D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =90A DS D R ... See More ⇒
8.9. Size:1413K cn apm
ap90n06p ap90n06t.pdf
AP90N06PIT 60V N-Channel Enhancement Mode MOSFET Description The AP90N06P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =90A DS D R ... See More ⇒
8.10. Size:1327K cn apm
ap90n06f.pdf
AP90N06F 60V N-Channel Enhancement Mode MOSFET Description The AP90N06F uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =90A DS D R ... See More ⇒
8.11. Size:1655K cn apm
ap90n02nf.pdf
AP90N02NF 20V N-Channel Enhancement Mode MOSFET Description The AP90N02NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 20V I =90 A DS D R ... See More ⇒
Detailed specifications: AP15G04NF
, AP220N06MP
, AP2301AI
, AP2302AI
, AP3P06MI
, AP4606B
, AP4G02LI
, AP8P06S
, IRFP064N
, AP10G04S
, AP15H06S
, AP4957A
, AP65N06D
, AP65N06DF
, AP6G03S
, AP6P04S
, AP8G06S
.
Keywords - AP90N08NF MOSFET specs
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