AP90N08NF Datasheet and Replacement
Type Designator: AP90N08NF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 180 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 85 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 95 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 38 nS
Cossⓘ - Output Capacitance: 546 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0052 Ohm
Package: PDFN5X6-8L
AP90N08NF substitution
AP90N08NF Datasheet (PDF)
ap90n08nf.pdf

AP90N08NF 85V N-Channel Enhancement Mode MOSFET Description The AP90N08NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 85V I =95A DS DR
ap90n06d.pdf

AP90N06D 60V N-Channel Enhancement Mode MOSFET Description The AP90N06D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =90A DS DR
Datasheet: AP15G04NF , AP220N06MP , AP2301AI , AP2302AI , AP3P06MI , AP4606B , AP4G02LI , AP8P06S , 5N50 , , , , , , , , .
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MOSFET: AP90N08NF | AP8P06S | AP4G02LI | AP4606B | AP3P06MI | AP2302AI | AP2301AI | AP220N06MP | AP15G04NF | AP10N04S | AP8G04S | AP85N03NF | AP80N06D | AP70H06NF | AP50P02DF | AP34N20P
MDT7N65 | MDT70N03 | MDT60NF06D | MDT60N10D | MDT60N06D | MDT5N65 | MPG100N08P | MPG100N07S | MPG100N07P | MPG100N06S | MPG100N06P | MPF9N20 | MPF8N65 | MPF5N65 | MPF50N25 | MPF40N25 | MPF3N150 | MPF2N60 | MDT50N06D | MDT40N10D | MDT40N06D | MDT30N10D | MDT30N10 | MDT30N06L | MDT2N60 | MDT20P04D
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