All MOSFET. APJ30N65F Datasheet

 

APJ30N65F Datasheet and Replacement


   Type Designator: APJ30N65F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 25.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 14 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 30.3 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.34 Ohm
   Package: TO220F
 

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APJ30N65F Datasheet (PDF)

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APJ30N65F

APJ30N65FIPIT (AP65R340) 650V N-Channel Enhancement Mode MOSFET Description The APJ30N65F/P/T is CoolFET II MOSFET family that is utilizing charge balance technology for extremely low on-resistance and low gate charge performance. APJ14N65F/P/T is suitable for applications which require superior power density and outstanding efficiency General Features V = 650V Type740V

Datasheet: AP65N06D , AP65N06DF , AP6G03S , AP6P04S , AP8G06S , APG120N04NF , APG60N10S , AP65R650 , IRF640 , APJ30N65P , APJ30N65T , APJ50N65F , APJ50N65P , APJ50N65T , AP65R190 , APN9N50D , APJ14N65D .

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