AP100N03P Datasheet and Replacement. Cross Reference Search

AP100N03P Datasheet (PDF)

..1. Size:1583K cn apm
ap100n03p ap100n03t.pdf pdf_icon

AP100N03P/T30V N-Channel Enhancement Mode MOSFET Description The AP100N03P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =100 A DS DR

6.1. Size:1377K cn apm
ap100n03ad.pdf pdf_icon

AP100N03AD 30V N-Channel Enhancement Mode MOSFET Description The AP100N03AD uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =30V I =100A DS DR

6.2. Size:1663K cn apm
ap100n03d.pdf pdf_icon

AP100N03D 30V N-Channel Enhancement Mode MOSFET Description The AP100N03D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =100 A DS DR

6.3. Size:1322K cn apm
ap100n03y.pdf pdf_icon

AP100N03Y 30V N-Channel Enhancement Mode MOSFET Description The AP100N03Y uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =30V I =100A DS DR

Datasheet: APN9N50D , APJ14N65D , APJ14N65F , APJ14N65P , APJ14N65T , AP01P10I , AP100N03AD , AP100N03D , IRF630 , AP100N03T , AP100N03Y , AP100N04D , AP100N04NF , AP100N08D , AP100P02NF , APG60N10P , APG60N10T .