AP100N03Y Datasheet. Specs and Replacement

Type Designator: AP100N03Y  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 46 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 100 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14.5 nS

Cossⓘ - Output Capacitance: 245 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm

Package: TO251

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AP100N03Y datasheet

 ..1. Size:1322K  cn apm
 ap100n03y.pdf pdf_icon

AP100N03Y

AP100N03Y 30V N-Channel Enhancement Mode MOSFET Description The AP100N03Y uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =30V I =100A DS D R ... See More ⇒

 6.1. Size:1583K  cn apm
 ap100n03p ap100n03t.pdf pdf_icon

AP100N03Y

AP100N03P/T 30V N-Channel Enhancement Mode MOSFET Description The AP100N03P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =100 A DS D R ... See More ⇒

 6.2. Size:1377K  cn apm
 ap100n03ad.pdf pdf_icon

AP100N03Y

AP100N03AD 30V N-Channel Enhancement Mode MOSFET Description The AP100N03AD uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =30V I =100A DS D R ... See More ⇒

 6.3. Size:1663K  cn apm
 ap100n03d.pdf pdf_icon

AP100N03Y

AP100N03D 30V N-Channel Enhancement Mode MOSFET Description The AP100N03D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =100 A DS D R ... See More ⇒

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Detailed specifications: APJ14N65F, APJ14N65P, APJ14N65T, AP01P10I, AP100N03AD, AP100N03D, AP100N03P, AP100N03T, IRF630, AP100N04D, AP100N04NF, AP100N08D, AP100P02NF, APG60N10P, APG60N10T, APG80N10NF, APG80N10P

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