All MOSFET. AP100N04D Datasheet

 

AP100N04D Datasheet and Replacement


   Type Designator: AP100N04D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 52.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 100 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 11.8 nS
   Cossⓘ - Output Capacitance: 275 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
   Package: TO252
 

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AP100N04D Datasheet (PDF)

 ..1. Size:903K  cn apm
 ap100n04d.pdf pdf_icon

AP100N04D

AP100N04D 40V N-Channel Enhancement Mode MOSFET Description The AP100N04D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =100 A DS DR

 6.1. Size:1319K  cn apm
 ap100n04nf.pdf pdf_icon

AP100N04D

AP100N04NF 40V N-Channel Enhancement Mode MOSFET Description The AP100N04NF uses advanced APM-SGT II technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =100A DS DR

 7.1. Size:1583K  cn apm
 ap100n03p ap100n03t.pdf pdf_icon

AP100N04D

AP100N03P/T30V N-Channel Enhancement Mode MOSFET Description The AP100N03P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =100 A DS DR

 7.2. Size:1377K  cn apm
 ap100n03ad.pdf pdf_icon

AP100N04D

AP100N03AD 30V N-Channel Enhancement Mode MOSFET Description The AP100N03AD uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =30V I =100A DS DR

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Datasheet: APJ14N65P , APJ14N65T , AP01P10I , AP100N03AD , AP100N03D , AP100N03P , AP100N03T , AP100N03Y , IRF9540 , AP100N04NF , AP100N08D , AP100P02NF , APG60N10P , APG60N10T , APG80N10NF , APG80N10P , APG80N10T .

History: IPD65R600E6 | IPB057N06N

Keywords - AP100N04D MOSFET datasheet

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