All MOSFET. APG60N10P Datasheet

 

APG60N10P Datasheet and Replacement


   Type Designator: APG60N10P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 107 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 60 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5.2 nS
   Cossⓘ - Output Capacitance: 321.7 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
   Package: TO220
 

 APG60N10P substitution

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APG60N10P Datasheet (PDF)

 ..1. Size:1892K  cn apm
apg60n10p apg60n10t.pdf pdf_icon

APG60N10P

APG60N10PIT 100V N-SGT Enhancement Mode MOSFET General Description APG60N10P/T use advanced SGT MOSFET technology to provide low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics. This device is specially designed to get better ruggedness and suitable to use in Features Low RDS(on) & FOM Extremely low switching loss Excellent stability and u

 6.1. Size:2235K  cn apm
apg60n10nf.pdf pdf_icon

APG60N10P

APG60N10NF 100V N-SGT Enhancement Mode MOSFET General Description APG60N10NF use advanced SGT MOSFET technology to provide low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics. This device is specially designed to get better ruggedness and suitable to use in Features Low RDS(on) & FOM Extremely low switching loss Excellent stability and uni

 6.2. Size:2069K  cn apm
apg60n10s.pdf pdf_icon

APG60N10P

APG60N10S 100V N-SGT Enhancement Mode MOSFET General Description APG60N10S use advanced SGT MOSFET technology to provide low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics. This device is specially designed to get better ruggedness and suitable to use in Features Low RDS(on) & FOM Extremely low switching loss Excellent stability and unifo

 6.3. Size:1272K  cn apm
apg60n10d.pdf pdf_icon

APG60N10P

APG60N10D 100V N-SGT Enhancement Mode MOSFET General Description APG60N10D use advanced SGT MOSFET technology to provide low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics. This device is specially designed to get better ruggedness and suitable to use in Features Low RDS(on) & FOM Extremely low switching loss Excellent stability and unifo

Datasheet: AP100N03D , AP100N03P , AP100N03T , AP100N03Y , AP100N04D , AP100N04NF , AP100N08D , AP100P02NF , SKD502T , APG60N10T , APG80N10NF , APG80N10P , APG80N10T , APJ10N65D , AP65R950 , APJ10N65F , APJ10N65T .

History: IRFB23N20D | STP15NM65N

Keywords - APG60N10P MOSFET datasheet

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