All MOSFET. APG80N10P Datasheet

 

APG80N10P Datasheet and Replacement


   Type Designator: APG80N10P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 361.2 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
   Package: TO220
 

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APG80N10P Datasheet (PDF)

 ..1. Size:1170K  cn apm
 apg80n10p apg80n10t.pdf pdf_icon

APG80N10P

APG80N10PIT 100V N-SGT Enhancement Mode MOSFET General Description APG80N10P/T use advanced SGT MOSFET technology to provide low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics. This device is specially designed to get better ruggedness and suitable to use in Features Low RDS(on) & FOM Extremely low switching loss Excellent stability and u

 6.1. Size:1506K  cn apm
 apg80n10nf.pdf pdf_icon

APG80N10P

APG80N10NF 100V N-SGT Enhancement Mode MOSFET General Description APG80N10NF use advanced SGT MOSFET technology to provide low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics. This device is specially designed to get better ruggedness and suitable to use in Features Low RDS(on) & FOM Extremely low switching loss Excellent stability and uni

Datasheet: AP100N03Y , AP100N04D , AP100N04NF , AP100N08D , AP100P02NF , APG60N10P , APG60N10T , APG80N10NF , 2N7000 , APG80N10T , APJ10N65D , AP65R950 , APJ10N65F , APJ10N65T , APJ10N65P , AP100P03D , AP100P04D .

History: IRFB23N20D | STP15NM65N

Keywords - APG80N10P MOSFET datasheet

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