All MOSFET. APJ10N65D Datasheet

 

APJ10N65D Datasheet and Replacement


   Type Designator: APJ10N65D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 25.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 26.4 nS
   Cossⓘ - Output Capacitance: 13.7 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.95 Ohm
   Package: TO252
 

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APJ10N65D Datasheet (PDF)

 ..1. Size:1579K  cn apm
 apj10n65d ap65r950.pdf pdf_icon

APJ10N65D

APJ10N65D (AP65R950) 650V N-Channel Enhancement Mode MOSFET Description The APJ10N65D is CoolFET II MOSFET family that is utilizing charge balance technology for extremely low on-resistance and low gate charge performance. APJ10N65D is suitable for applications which require superior power density and outstanding efficiency General Features V = 650V Type720V IDM =10A

 6.1. Size:1554K  cn apm
 apj10n65f apj10n65t apj10n65p ap65r950.pdf pdf_icon

APJ10N65D

APJ10N65FITIP (AP65R950) 650V N-Channel Enhancement Mode MOSFET Description The APJ10N65F/T/P is CoolFET II MOSFET family that is utilizing charge balance technology for extremely low on-resistance and low gate charge performance. APJ14N65F/P/T is suitable for applications which require superior power density and outstanding efficiency General Features V = 650V Type730V

Datasheet: AP100N04NF , AP100N08D , AP100P02NF , APG60N10P , APG60N10T , APG80N10NF , APG80N10P , APG80N10T , IRFP260 , AP65R950 , APJ10N65F , APJ10N65T , APJ10N65P , AP100P03D , AP100P04D , AP10G03S , AP10G06NF .

History: IRFB23N20D | STP15NM65N

Keywords - APJ10N65D MOSFET datasheet

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