AP10N06MSI Datasheet and Replacement
Type Designator: AP10N06MSI
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 16.6 nS
Cossⓘ - Output Capacitance: 65 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.036 Ohm
Package: SOT223
AP10N06MSI substitution
AP10N06MSI Datasheet (PDF)
ap10n06msi.pdf

AP10N06MSI 60V N-Channel Enhancement Mode MOSFET Description The AP10N06MSI uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =10A DS DR
ap10n06s.pdf

AP10N06S 60V N-Channel Enhancement Mode MOSFET Description The AP10N06S uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =10 A DS DR
ap10n06d.pdf

AP10N06D 60V N-Channel Enhancement Mode MOSFET Description The AP10N06D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =13A DS DR
ap10n012in.pdf

AP10N012INHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD 100% Rg & UIS Test D BVDSS 100V Simple Drive Requirement RDS(ON) 12.5m Lower On-resistance ID 35.4AGG RoHS Compliant & Halogen-FreeSSDescriptionAP4604 series are from AdvancedPower innovated designAP10N012 series are fromAdvanced Power innovated desi
Datasheet: AP100P04D , AP10G03S , AP10G06NF , AP10G06S , AP10H04DF , AP10H10S , AP10N04MSI , AP10N06D , STP80NF70 , , , , , , , , .
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MOSFET: AP10N06MSI | AP10N06D | AP10N04MSI | AP10H10S | AP10H04DF | AP10G06S | AP10G06NF | AP10G03S | AP100P04D | AP100P03D | APJ10N65P | APJ10N65T | APJ10N65F | AP65R950 | APJ10N65D | APG80N10T
MDT7N65 | MDT70N03 | MDT60NF06D | MDT60N10D | MDT60N06D | MDT5N65 | MPG100N08P | MPG100N07S | MPG100N07P | MPG100N06S | MPG100N06P | MPF9N20 | MPF8N65 | MPF5N65 | MPF50N25 | MPF40N25 | MPF3N150 | MPF2N60 | MDT50N06D | MDT40N10D | MDT40N06D | MDT30N10D | MDT30N10 | MDT30N06L | MDT2N60 | MDT20P04D
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