AP10N06MSI datasheet, подбор замены

 ..1. Size:1506K  cn apm
 ap10n06msi.pdf 

AP10N06MSI 60V N-Channel Enhancement Mode MOSFET Description The AP10N06MSI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =10A DS D R

 7.1. Size:936K  cn apm
 ap10n06s.pdf 

AP10N06S 60V N-Channel Enhancement Mode MOSFET Description The AP10N06S uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =10 A DS D R

 7.2. Size:1726K  cn apm
 ap10n06d.pdf 

AP10N06D 60V N-Channel Enhancement Mode MOSFET Description The AP10N06D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =13A DS D R

 8.1. Size:255K  ape
 ap10n012in.pdf 

AP10N012IN Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D 100% Rg & UIS Test D BVDSS 100V Simple Drive Requirement RDS(ON) 12.5m Lower On-resistance ID 35.4A G G RoHS Compliant & Halogen-Free S S Description AP4604 series are from AdvancedPower innovated design AP10N012 series are fromAdvanced Power innovated desi

 8.2. Size:219K  ape
 ap10n012i.pdf 

AP10N012I Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D 100% Rg & UIS Test D BVDSS 100V Simple Drive Requirement RDS(ON) 12.5m Lower On-resistance ID 35.4A G G RoHS Compliant & Halogen-Free S S Description AP4604 series are from AdvancedPower innovated design AP10N012 series are fromAdvanced Power innovated desig

 8.3. Size:70K  ape
 ap10n012mt.pdf 

AP10N012MT Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 100V D Simple Drive Requirement RDS(ON) 12.5m Lower On-resistance ID 43A G RoHS Compliant & Halogen-Free D S D D Description D AP10N012 series are from Advanced Power innovated design and silicon process technology to achieve the lo

 8.4. Size:203K  ape
 ap10n012p.pdf 

AP10N012P Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D 100% Rg & UIS Test D BVDSS 100V Simple Drive Requirement RDS(ON) 12.5m Lower On-resistance ID 48A G G RoHS Compliant & Halogen-Free S S Description AP4604 series are from AdvancedPower innovated design AP10N012 series are fromAdvanced Power innovated design

 8.5. Size:241K  ape
 ap10n012h.pdf 

AP10N012H Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D 100% Rg & UIS Test D BVDSS 100V Simple Drive Requirement RDS(ON) 12.5m Lower On-resistance ID 48A G G RoHS Compliant & Halogen-Free S S Description G AP4604 series are from AdvancedPower innovated design AP10N012 series are fromAdvanced Power innovated desi

 8.6. Size:1351K  cn apm
 ap10n04msi.pdf 

AP10N04MSI 40V N-Channel Enhancement Mode MOSFET Description The AP10N04MSI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =40V I =10A DS D R

 8.7. Size:1840K  cn apm
 ap10n04s.pdf 

AP10N04S 40V N-Channel Enhancement Mode MOSFET Description The AP10N04S uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =10 A DS D R