APG60N10D MOSFET Datasheet: N-Ch, 100V, 60A. Full specification with pinout and replacement list

APG60N10D Specs and Replacement

   Type Designator: APG60N10D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 60 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 361.2 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
   Package: TO252

APG60N10D substitution

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APG60N10D datasheet

..1. Size:1272K cn apm
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APG60N10D 100V N-SGT Enhancement Mode MOSFET General Description APG60N10D use advanced SGT MOSFET technology to provide low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics. This device is specially designed to get better ruggedness and suitable to use in Features Low RDS(on) & FOM Extremely low switching loss Excellent stability and unifo... See More ⇒

6.1. Size:1892K cn apm
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APG60N10PIT 100V N-SGT Enhancement Mode MOSFET General Description APG60N10P/T use advanced SGT MOSFET technology to provide low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics. This device is specially designed to get better ruggedness and suitable to use in Features Low RDS(on) & FOM Extremely low switching loss Excellent stability and u... See More ⇒

6.2. Size:2235K cn apm
apg60n10nf.pdf pdf_icon

APG60N10NF 100V N-SGT Enhancement Mode MOSFET General Description APG60N10NF use advanced SGT MOSFET technology to provide low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics. This device is specially designed to get better ruggedness and suitable to use in Features Low RDS(on) & FOM Extremely low switching loss Excellent stability and uni... See More ⇒

6.3. Size:2069K cn apm
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APG60N10S 100V N-SGT Enhancement Mode MOSFET General Description APG60N10S use advanced SGT MOSFET technology to provide low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics. This device is specially designed to get better ruggedness and suitable to use in Features Low RDS(on) & FOM Extremely low switching loss Excellent stability and unifo... See More ⇒

Detailed specifications: AP10H10S , AP10N04MSI , AP10N06D , AP10N06MSI , APG40N10D , APG40N10DF , APG40N10NF , APG40N10S , IRFP450 , APG60N10NF , APG130N06P , APG130N06T , APG130N06F , APG180N04NF , APG20N06S , AP10N06S , AP10N10D .