APG60N10NF Datasheet. Specs and Replacement

Type Designator: APG60N10NF  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 361.2 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm

Package: DFN5X6-8L

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APG60N10NF datasheet

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APG60N10NF

APG60N10NF 100V N-SGT Enhancement Mode MOSFET General Description APG60N10NF use advanced SGT MOSFET technology to provide low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics. This device is specially designed to get better ruggedness and suitable to use in Features Low RDS(on) & FOM Extremely low switching loss Excellent stability and uni... See More ⇒

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 apg60n10p apg60n10t.pdf pdf_icon

APG60N10NF

APG60N10PIT 100V N-SGT Enhancement Mode MOSFET General Description APG60N10P/T use advanced SGT MOSFET technology to provide low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics. This device is specially designed to get better ruggedness and suitable to use in Features Low RDS(on) & FOM Extremely low switching loss Excellent stability and u... See More ⇒

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APG60N10NF

APG60N10S 100V N-SGT Enhancement Mode MOSFET General Description APG60N10S use advanced SGT MOSFET technology to provide low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics. This device is specially designed to get better ruggedness and suitable to use in Features Low RDS(on) & FOM Extremely low switching loss Excellent stability and unifo... See More ⇒

 6.3. Size:1272K  cn apm
 apg60n10d.pdf pdf_icon

APG60N10NF

APG60N10D 100V N-SGT Enhancement Mode MOSFET General Description APG60N10D use advanced SGT MOSFET technology to provide low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics. This device is specially designed to get better ruggedness and suitable to use in Features Low RDS(on) & FOM Extremely low switching loss Excellent stability and unifo... See More ⇒

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Detailed specifications: AP10N04MSI, AP10N06D, AP10N06MSI, APG40N10D, APG40N10DF, APG40N10NF, APG40N10S, APG60N10D, STP80NF70, APG130N06P, APG130N06T, APG130N06F, APG180N04NF, APG20N06S, AP10N06S, AP10N10D, AP10N10S

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.