APG130N06P PDF and Equivalents Search

 

APG130N06P Specs and Replacement


   Type Designator: APG130N06P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 168 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 130 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 6.7 nS
   Cossⓘ - Output Capacitance: 1250 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm
   Package: TO220
 

 APG130N06P substitution

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APG130N06P datasheet

 5.1. Size:1366K  cn apm
apg130n06d.pdf pdf_icon

APG130N06P

APG130N06D 60V N-SGT Enhancement Mode MOSFET General Description APG130N06D use advanced SGT MOSFET technology to provide low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics. This device is specially designed to get better ruggedness and suitable to use in Features Low RDS(on) & FOM Extremely low switching loss Excellent stability and unif... See More ⇒

 5.2. Size:1984K  cn apm
apg130n06nf.pdf pdf_icon

APG130N06P

APG130N06NF 60V N-SGT Enhancement Mode MOSFET General Description APG130N06NF use advanced SGT MOSFET technology to provide low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics. This device is specially designed to get better ruggedness and suitable to use in Features Low RDS(on) & FOM Extremely low switching loss Excellent stability and un... See More ⇒

Detailed specifications: AP10N06D , AP10N06MSI , APG40N10D , APG40N10DF , APG40N10NF , APG40N10S , APG60N10D , APG60N10NF , AO4407 , APG130N06T , APG130N06F , APG180N04NF , APG20N06S , AP10N06S , AP10N10D , AP10N10S , AP10N15D .

History: FDD6030BL

Keywords - APG130N06P MOSFET specs

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