AP10N10S Datasheet and Replacement. Cross Reference Search

AP10N10S Datasheet (PDF)

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AP10N10S 100V N-Channel Enhancement Mode MOSFET Description The AP10N10S uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =12.3A DS D R

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AIIP ERAP10N10K DATA SHEET N-Channel Power MOSFETD BT 100% & UIS Test Voss 100V T Simple Drive Requirement 135m0 Fast Switching Characteristic T lo 10A G T RHS cmpliant & Halgen-FreeDescription AP10N10K series are from Advanced Power innovated design and s T0-252silicon process technology to achieve the lowest possible onresistance and fast switchi

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AP10N10D 100V N-Channel Enhancement Mode MOSFET Description The AP10N10D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =10A DS D R

8.1. Size:1893K cn apm
ap10n15d.pdf pdf_icon

AP10N15D 150V N-Channel Enhancement Mode MOSFET Description The AP10N15D es advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 150V I =10A DS DR

Datasheet: APG60N10NF , APG130N06P , APG130N06T , APG130N06F , APG180N04NF , APG20N06S , AP10N06S , AP10N10D , 10N65 , AP10N15D , AP10N65F , AP10N65P , AP10P04D , AP10P06MSI , AP10P10D , AP120N04P , AP120N04T .