AP10N10S MOSFET Datasheet: N-Ch, 100V, 12.3A. Full specification with pinout and replacement list

AP10N10S Specs and Replacement

Type Designator: AP10N10S

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 30 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 12.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 38 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm

Package: SOP8

AP10N10S substitution

- MOSFET ⓘ Cross-Reference Search

AP10N10S datasheet

..1. Size:1388K cn apm
ap10n10s.pdf pdf_icon

AP10N10S 100V N-Channel Enhancement Mode MOSFET Description The AP10N10S uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =12.3A DS D R ... See More ⇒

7.1. Size:1565K allpower
ap10n10k.pdf pdf_icon

AIIP ER AP10N10K DATA SHEET N-Channel Power MOSFET D B T 100% & UIS Test Voss 100V T Simple Drive Requirement 135m0 Fast Switching Characteristic T lo 10A G T R HS c mpliant & Hal gen-Free Description AP10N10K series are from Advanced Power innovated design and s T0-252 silicon process technology to achieve the lowest possible on resistance and fast switchi... See More ⇒

7.2. Size:1385K cn apm
ap10n10d.pdf pdf_icon

AP10N10D 100V N-Channel Enhancement Mode MOSFET Description The AP10N10D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =10A DS D R ... See More ⇒

8.1. Size:1893K cn apm
ap10n15d.pdf pdf_icon

AP10N15D 150V N-Channel Enhancement Mode MOSFET Description The AP10N15D es advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 150V I =10A DS D R ... See More ⇒

Detailed specifications: APG60N10NF , APG130N06P , APG130N06T , APG130N06F , APG180N04NF , APG20N06S , AP10N06S , AP10N10D , 5N60 , AP10N15D , AP10N65F , AP10N65P , AP10P04D , AP10P06MSI , AP10P10D , AP120N04P , AP120N04T .