AP10P04D PDF and Equivalents Search

 

AP10P04D Specs and Replacement

Type Designator: AP10P04D

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 69 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm

Package: TO252

AP10P04D substitution

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AP10P04D datasheet

 ..1. Size:1420K  cn apm
ap10p04d.pdf pdf_icon

AP10P04D

AP10P04D -40V P-Channel Enhancement Mode MOSFET Description The AP10P04D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -40V I =-10A DS D R ... See More ⇒

 8.1. Size:1308K  cn apm
ap10p06msi.pdf pdf_icon

AP10P04D

AP10P06MSI -60V P-Channel Enhancement Mode MOSFET Description The AP10N06MSI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-10A DS D R ... See More ⇒

 9.1. Size:204K  ape
ap10p230h.pdf pdf_icon

AP10P04D

AP10P230H Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS -100V Simple Drive Requirement RDS(ON) 230m Fast Switching Characteristic ID -8.5A G RoHS Compliant & Halogen-Free S Description AP10P230 series are from Advanced Power innovated design and G D S silicon process technology to achieve ... See More ⇒

 9.2. Size:101K  ape
ap10p10gh j-hf.pdf pdf_icon

AP10P04D

AP10P10GH/J-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS -100V Lower Gate Charge RDS(ON) 500m Fast Switching Characteristic ID -5.7A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best G D S combination of fast switch... See More ⇒

Detailed specifications: APG180N04NF , APG20N06S , AP10N06S , AP10N10D , AP10N10S , AP10N15D , AP10N65F , AP10N65P , 18N50 , AP10P06MSI , AP10P10D , AP120N04P , AP120N04T , AP120N06P , AP120N06T , AP120N08P , AP120N08T .

History: 3N50

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